m o s f e t rohs device page 1 rev :a features - high-side switching - case: sot -363, molded plastic. - t erminals: solderable per mil-std-750, method 2026. cj3139kdw -g (dual p-channel ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) qw -btr52 comchip t echnology co., l td. s o t - 3 6 3 maximum ratings (at t a=25 c unless otherwise noted) drain-source voltage t yp. gate-source voltage drain current-continuous power dissipation (note 2) junction temperature range storage temperature range unit symbol parameter v dss v gs i d(dc) p d r ja t j t stg v alue -20 12 -0.66 150 833 -40 to +150 -55 to +150 v v a mw c/w c c thermal resistance from junction to ambient c o m c h i p s m d d i o d e s p e c i a l i s t v (br)dss r ds(on) max i d -20v 520m @ -4.5v 700m @ -2.5v -0.66a - low on-resistance 0.087(2.20) 0.079(2.00) 0.053(1.35) 0.045(1.15) 0.055(1.40) 0.047(1.20) 0.045(1.15) 0.041(1.05) 0.014(0.35) 0.006(0.15) 0.004(0.10) 0.018(0.46) 0.096(2.45) 0.085(2.15) 0.006(0.15) 0.003(0.08) 0.010(0.26) 0.000(0.00) company reserves the right to improve product design , functions and reliability without notice. 950m (typ) @ -1.8v - low threshold - fast switching speed g : gate s : source d : drain 5 4 g2 s2 d1 g1 d2 s1 2 3 1 6 6 5 4 1 2 3 - w eight: 0.006 grams (approx.) drain current-pulsed (note1) i dm(pulse) -2.64 a circuit diagram mechanical data
drain-source breakdown voltage v gs = 0v , i d = -250a zero gate voltage drain current forward transconductance reverse transfer capacitance input capacitance switching time (note4) t urn-on delay time t urn-of f delay time rise time fall time v ds = -20v , v gs = 0v v = -1.8v , gs i d = -500ma v ds = -10v , i d = -540ma v dd = -10v , i d = -200ma v gs = -4.5v , r g = 10? v (br) dss i dss gfs c oss c rss td(on) tr td(of f) tf -20 -1 0.8 9 5.8 32.7 20.3 v s pf ns c iss 170 page 2 rev :a qw -btr52 comchip t echnology co., l td. m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t dynamic (note 4) characteristics output capacitance 25 15 on/off states electrical characteristics (at t a =25c unless otherwise noted) company reserves the right to improve product design , functions and reliability without notice. a v ds = -16v , v gs = 0v f=1mh z v ds = v gs , i d = -250a -1.1 v -0.35 gate threshold voltage (note 3) v gs(th) gate-body leakage current v gs = 10v , v ds = 0v i gss 20 a r ds(on) v = -4.5v , gs i d = -1a 520 v = -2.5v , gs i d = -800ma 950 m? 700 i s = -0.5a , v gs = 0v v sd -1.2 v drain-source on-state resistance (note 3) drain-source diode characteristics drain-source diode forward voltage (note 3) parameter conditions symbol min t yp max unit notes: 1. repetitive rating: pulse width limited by maximum junction temperture. 2. this test is performed with no heat sink at t a=25c. 3. pulse test: pulse width 300s, duty cycle 0.5%. 4. these parameters have no way to verify .
qw -btr52 ra ting and characteristic cur ves (cj3139kdw -g) comchip t echnology co., l td. page 3 rev :a m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t d r a i n c u r r e n t , i d ( a ) gate to source v oltage, v gs (v ) o n - r e s i s t a n c e , r d s ( o n ) ( ? ) gate to source v oltage, v gs (v ) fig.4 - r ds(on) v gs o n - r e s i s t a n c e , r d s ( o n ) ( ? ) drain current, i d (a) fig.3 - r ds(on) i d - 1 e - 3 source to drain v oltage, v sd (v ) - 0 . 4 - 3 - 0 . 0 1 fig.5 - i s v sd - 0 . 8 - 1 . 2 - 2 . 0 - 1 - 0 . 1 fig.2 - t ransfer c haracteristi cs d r a i n c u r r e n t , ( a ) i d drain to source v oltage, v ds (v) 0 - 1 - 2 - 3 - 4 - 5 - 1 e - 4 i d = -0.8a - 1 - 2 - 4 - 6 - 3 0 - 0 . 4 - 2 . 0 - 0 . 8 s o u r c e c u r r e n t , i s ( a ) - 0 - 0 . 5 - 1 . 0 - 2 . 0 - 3 . 0 0 . 0 2 . 0 1 . 2 0 . 8 1 . 6 0 0 . 4 1 . 6 2 . 0 - 0 . 0 - 1 . 2 - 0 . 8 - 1 . 6 - 2 . 0 - 0 . 4 - 0 . 0 - 1 . 5 - 1 . 0 - 2 . 0 - 2 . 5 - 0 . 5 0 . 8 1 . 2 t a=25c - 1 . 2 - 1 . 6 - 1 . 6 company reserves the right to improve product design , functions and reliability without notice. - 3 . 0 fig.1 - output characteristics - 1 . 5 - 2 . 5 v g s = - 1 . 8 v v g s = - 2 . 5 v v g s = - 4 . 5 v v g s = - 3 v v g s = - 2 . 5 v v g s = - 1 . 5 v v g s = - 4 . 5 v v g s = - 1 0 v t a=25c t a=100c pu lse d v d s = - 5 v - 5 pu lse d t h r e s h o l d v o l t a g e , v t h ( v ) junction t emperature, t j (c ) fig.6 - threshold v oltage 2 5 5 0 1 2 5 7 5 - 0 . 4 - 0 . 5 - 0 . 7 - 0 . 8 - 0 . 6 1 0 0 i d = -250ua 0 . 4
reel t aping specification b c d d d 2 d 1 s o t - 3 6 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 3 9 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 5 4 . 4 0 1 . 0 0 1 3 . 0 0 1 . 0 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 . 0 0 2 . 0 0 7 . 0 0 8 0 . 0 7 9 0 . 5 1 2 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 s o t - 3 6 3 2 . 2 5 0 . 0 5 0 . 0 8 9 0 . 0 0 2 2 . 5 5 0 . 0 5 0 . 1 0 0 0 . 0 0 2 1 . 2 0 0 . 0 5 0 . 0 4 7 0 . 0 0 2 1 2 . 3 0 1 . 0 0 0 . 4 8 4 0 . 0 3 9 0 . 0 5 9 0 . 0 0 4 8 . 0 0 + 0 . 3 0 / - 0 . 1 0 0 . 3 1 5 + 0 . 0 1 2 / - 0 . 0 0 4 o 1 2 0 d 1 d 2 w 1 d d f e b p 1 p 0 p a w c m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t page 4 rev :a qw -btr52 comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice.
page 5 rev :a comchip t echnology co., l td. qw -btr52 marking code size (inch) 0.032 (mm) 0.80 0.40 0.65 0.016 0.026 1.94 0.076 e 2.74 0.108 b c d a sot -363 39k . 1 2 3 6 4 cj3139kdw -g 39k suggested p ad layout a d c b e 5 mosfet part number marking code standard packaging c a s e t y p e 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k s o t - 3 6 3 company reserves the right to improve product design , functions and reliability without notice.
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